KM416V4104BS-L6 8MB 4 x 16 bit EDO CMOS DRAM

The KM416V4104BS-L6 comes from a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle (4K Ref.), access time (60ns). All of this family have /CAS-before-/RAS refresh, /RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung’s advanced CMOS process to realize high band-width, low power consumption and high reliability.

Features:

• Extended Data Out (EDO) Mode operation
• 2 /CAS Byte/Word Read/Write operation
• /CAS-before-/RAS refresh capability
• /RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V+-0.3V power supply